技术参数

• Package / Case TO-247-3
• Mounting Type Through Hole
• Operating Temperature -55°C ~ 150°C (TJ)
• Technology MOSFET (Metal Oxide)
• FET Type N-Channel
• Current - Continuous Drain (Id) @ 25°C 54A (Tc)
• Rds On (Max) @ Id, Vgs 77mOhm @ 27A, 10V
• Power Dissipation (Max) 481W (Tc)
• Vgs(th) (Max) @ Id 5V @ 5.4mA
• Supplier Device Package TO-247-3
• Drive Voltage (Max Rds On, Min Rds On) 10V
• Vgs (Max) ±20V
• Drain to Source Voltage (Vdss) 650 V
• Gate Charge (Qg) (Max) @ Vgs 164 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds 7109 pF @ 100 V
• ECCN EAR99
• HTSUS 8542.39.0001