技术参数

• Package / Case TO-220-3
• Mounting Type Through Hole
• Operating Temperature 150°C (TJ)
• Technology MOSFET (Metal Oxide)
• FET Type N-Channel
• Current - Continuous Drain (Id) @ 25°C 5.5A (Tc)
• Rds On (Max) @ Id, Vgs 1Ohm @ 3A, 10V
• Power Dissipation (Max) 100W (Tc)
• Vgs(th) (Max) @ Id 4V @ 250µA
• Supplier Device Package TO-220
• Drive Voltage (Max Rds On, Min Rds On) 10V
• Vgs (Max) ±20V
• Drain to Source Voltage (Vdss) 400 V
• Gate Charge (Qg) (Max) @ Vgs 24 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds 530 pF @ 25 V
• ECCN EAR99
• HTSUS 0000.00.0000
• Moisture Sensitivity Level (MSL) 1 (Unlimited)
• REACH Status Vendor Undefined
• RoHS Status RoHS non-compliant