技术参数

• Package / Case TO-251-3 Short Leads, IPAK, TO-251AA
• Mounting Type Through Hole
• Operating Temperature 150°C
• Technology MOSFET (Metal Oxide)
• FET Type P-Channel
• Current - Continuous Drain (Id) @ 25°C 8A
• Rds On (Max) @ Id, Vgs 75mOhm @ 4A, 10V
• Power Dissipation (Max) 1W (Ta), 15W (Tc)
• Vgs(th) (Max) @ Id 2.6V @ 1mA
• Supplier Device Package TP
• Drive Voltage (Max Rds On, Min Rds On) 4V, 10V
• Vgs (Max) ±20V
• Drain to Source Voltage (Vdss) 30 V
• Gate Charge (Qg) (Max) @ Vgs 11 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds 510 pF @ 10 V
• ECCN EAR99
• HTSUS 8541.29.0095
• Moisture Sensitivity Level (MSL) 1 (Unlimited)
• REACH Status Vendor Undefined
• RoHS Status Not applicable