技术参数

• Package / Case TO-218-3
• Mounting Type Through Hole
• Transistor Type PNP
• Operating Temperature -65°C ~ 150°C (TJ)
• DC Current Gain (hFE) (Min) @ Ic, Vce 1000 @ 5A, 4V
• Supplier Device Package TO-218
• Current - Collector (Ic) (Max) 10 A
• Voltage - Collector Emitter Breakdown (Max) 100 V
• Power - Max 125 W
• ECCN EAR99
• HTSUS 8541.29.0095
• RoHS Status RoHS non-compliant