- 产品型号 1N645
- 品牌 NTE Electronics, Inc
- RoHS Yes
- 描述 DIODE GEN PURP 225V 400MA DO35
- 分类 单二极管
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PDF
- 库存 1576
定价:
- 1 2.22
技术参数
- Package / Case DO-204AH, DO-35, Axial
- Mounting Type Through Hole
- Speed Standard Recovery >500ns, > 200mA (Io)
- Technology Standard
- Capacitance @ Vr, F 15pF @ 4V, 1MHz
- Current - Average Rectified (Io) 400mA
- Supplier Device Package DO-35
- Operating Temperature - Junction -65°C ~ 175°C
- Voltage - DC Reverse (Vr) (Max) 225 V
- Voltage - Forward (Vf) (Max) @ If 1 V @ 400 mA
- Current - Reverse Leakage @ Vr 200 nA @ 225 V
- ECCN EAR99
- HTSUS 8541.10.0070
- REACH Status Vendor Undefined
- RoHS Status ROHS3 Compliant
