技术参数

• Package / Case TO-226-3, TO-92-3 (TO-226AA) Formed Leads
• Mounting Type Through Hole
• Transistor Type PNP
• Operating Temperature -55°C ~ 150°C (TJ)
• Vce Saturation (Max) @ Ib, Ic 400mV @ 2mA, 20mA
• Current - Collector Cutoff (Max) 250nA (ICBO)
• DC Current Gain (hFE) (Min) @ Ic, Vce 25 @ 30mA, 10V
• Frequency - Transition 50MHz
• Supplier Device Package TO-92 (TO-226)
• Current - Collector (Ic) (Max) 500 mA
• Voltage - Collector Emitter Breakdown (Max) 200 V
• Power - Max 625 mW
• ECCN EAR99
• HTSUS 8541.21.0095
• RoHS Status ROHS3 Compliant