技术参数

• Package / Case TO-226-3, TO-92-3 (TO-226AA) Formed Leads
• Mounting Type Through Hole
• Transistor Type NPN - Darlington
• Operating Temperature -55°C ~ 150°C (TJ)
• Vce Saturation (Max) @ Ib, Ic 1V @ 10µA, 10mA
• Current - Collector Cutoff (Max) 100nA (ICBO)
• DC Current Gain (hFE) (Min) @ Ic, Vce 20000 @ 10mA, 5V
• Supplier Device Package TO-92 (TO-226)
• Voltage - Collector Emitter Breakdown (Max) 20 V
• Power - Max 625 mW
• ECCN EAR99
• HTSUS 8541.21.0095
• RoHS Status ROHS3 Compliant