- 产品型号 IMW120R140M1HXKSA1
- 品牌 IR (Infineon Technologies)
- RoHS Yes
- 描述 SICFET N-CH 1.2KV 19A TO247-3
- 分类 单 FET、MOSFET
-
PDF
- 库存 1582
定价:
- 1 7.45
- 30 5.95
- 120 5.32
- 510 4.69
- 1020 4.23
- 2010 3.96
技术参数
- Package / Case TO-247-3
- Mounting Type Through Hole
- Operating Temperature -55°C ~ 175°C (TJ)
- Technology SiCFET (Silicon Carbide)
- FET Type N-Channel
- Current - Continuous Drain (Id) @ 25°C 19A (Tc)
- Rds On (Max) @ Id, Vgs 182mOhm @ 6A, 18V
- Power Dissipation (Max) 94W (Tc)
- Vgs(th) (Max) @ Id 5.7V @ 2.5mA
- Supplier Device Package PG-TO247-3-41
- Drive Voltage (Max Rds On, Min Rds On) 15V, 18V
- Vgs (Max) +23V, -7V
- Drain to Source Voltage (Vdss) 1200 V
- Gate Charge (Qg) (Max) @ Vgs 13 nC @ 18 V
- Input Capacitance (Ciss) (Max) @ Vds 454 pF @ 800 V
- ECCN EAR99
- HTSUS 8541.29.0095
- Moisture Sensitivity Level (MSL) Not Applicable
- REACH Status REACH Unaffected
- RoHS Status ROHS3 Compliant
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