- 产品型号 AIMBG120R040M1XTMA1
- 品牌 IR (Infineon Technologies)
- RoHS Yes
- 描述 SIC_DISCRETE
- 分类 单 FET、MOSFET
-
PDF
- 库存 2647
- 1000 11.12
技术参数
- Package / Case TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
- Mounting Type Surface Mount
- Operating Temperature -55°C ~ 175°C
- Technology SiCFET (Silicon Carbide)
- FET Type N-Channel
- Current - Continuous Drain (Id) @ 25°C 48A
- Supplier Device Package PG-TO263-7-12
- Drain to Source Voltage (Vdss) 1200 V
- ECCN EAR99
- HTSUS 8541.29.0095
- Moisture Sensitivity Level (MSL) 1 (Unlimited)
- REACH Status REACH Unaffected
- RoHS Status ROHS3 Compliant
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