• In Stock 1763
Pricing:
  • 1 10.97

Technical Details

  • Package / Case TO-247-3
  • Mounting Type Through Hole
  • Speed No Recovery Time > 500mA (Io)
  • Reverse Recovery Time (trr) 0 ns
  • Technology SiC (Silicon Carbide) Schottky
  • Capacitance @ Vr, F 1138pF @ 1V, 1MHz
  • Current - Average Rectified (Io) 40A
  • Supplier Device Package PG-TO247-3-41
  • Operating Temperature - Junction -40°C ~ 175°C
  • Grade Automotive
  • Voltage - DC Reverse (Vr) (Max) 650 V
  • Voltage - Forward (Vf) (Max) @ If 1.7 V @ 40 A
  • Current - Reverse Leakage @ Vr 120 µA @ 650 V
  • Qualification AEC-Q100/101
  • ECCN EAR99
  • HTSUS 8541.10.0080
  • Moisture Sensitivity Level (MSL) Not Applicable
  • REACH Status REACH Unaffected
  • RoHS Status ROHS3 Compliant

Related Products


MOSFET 650V NCH SIC TRENCH

In Stock: 1851

  • 1: 20.5
  • 30: 16.6
  • 120: 15.62
  • 510: 14.16
Top