• In Stock 3285
Pricing:
  • 1 1.61
  • 10 1.34
  • 100 1.06
  • 500 0.9
  • 1000 0.76
  • 2000 0.73
  • 5000 0.7
  • 10000 0.68

Technical Details

  • Package / Case 4-DIP (0.300", 7.62mm)
  • Mounting Type Through Hole
  • Operating Temperature -55°C ~ 175°C (TJ)
  • Technology MOSFET (Metal Oxide)
  • FET Type P-Channel
  • Current - Continuous Drain (Id) @ 25°C 1.6A (Ta)
  • Rds On (Max) @ Id, Vgs 280mOhm @ 960mA, 10V
  • Power Dissipation (Max) 1.3W (Ta)
  • Vgs(th) (Max) @ Id 4V @ 1µA
  • Supplier Device Package 4-HVMDIP
  • Drive Voltage (Max Rds On, Min Rds On) 10V
  • Vgs (Max) ±20V
  • Drain to Source Voltage (Vdss) 60 V
  • Gate Charge (Qg) (Max) @ Vgs 19 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds 570 pF @ 25 V
  • ECCN EAR99
  • HTSUS 8541.29.0095
  • Moisture Sensitivity Level (MSL) 1 (Unlimited)
  • REACH Status REACH Unaffected
  • RoHS Status ROHS3 Compliant

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