- Product Model IRLD120PBF
- Brand Vishay / Siliconix
- RoHS Yes
- Description MOSFET N-CH 100V 1.3A 4DIP
- Categories Single FETs, MOSFETs
-
PDF
- In Stock 3980
Pricing:
- 1 1.68
- 10 1.4
- 100 1.11
- 500 0.94
- 1000 0.8
- 2000 0.76
Technical Details
- Package / Case 4-DIP (0.300", 7.62mm)
- Mounting Type Through Hole
- Operating Temperature -55°C ~ 175°C (TJ)
- Technology MOSFET (Metal Oxide)
- FET Type N-Channel
- Current - Continuous Drain (Id) @ 25°C 1.3A (Ta)
- Rds On (Max) @ Id, Vgs 270mOhm @ 780mA, 5V
- Power Dissipation (Max) 1.3W (Ta)
- Vgs(th) (Max) @ Id 2V @ 250µA
- Supplier Device Package 4-HVMDIP
- Drive Voltage (Max Rds On, Min Rds On) 4V, 5V
- Vgs (Max) ±10V
- Drain to Source Voltage (Vdss) 100 V
- Gate Charge (Qg) (Max) @ Vgs 12 nC @ 5 V
- Input Capacitance (Ciss) (Max) @ Vds 490 pF @ 25 V
- ECCN EAR99
- HTSUS 8541.29.0095
- Moisture Sensitivity Level (MSL) 1 (Unlimited)
- RoHS Status ROHS3 Compliant
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