- Product Model SCT3080ALGC11
- Brand ROHM Semiconductor
- RoHS Yes
- Description SICFET N-CH 650V 30A TO247N
- Categories Single FETs, MOSFETs
-
PDF
- In Stock 3046
- 1 11.97
- 30 9.56
- 120 8.55
- 510 7.54
- 1020 6.79
Technical Details
- Package / Case TO-247-3
- Mounting Type Through Hole
- Operating Temperature 175°C (TJ)
- Technology SiCFET (Silicon Carbide)
- FET Type N-Channel
- Current - Continuous Drain (Id) @ 25°C 30A (Tc)
- Rds On (Max) @ Id, Vgs 104mOhm @ 10A, 18V
- Power Dissipation (Max) 134W (Tc)
- Vgs(th) (Max) @ Id 5.6V @ 5mA
- Supplier Device Package TO-247N
- Drive Voltage (Max Rds On, Min Rds On) 18V
- Vgs (Max) +22V, -4V
- Drain to Source Voltage (Vdss) 650 V
- Gate Charge (Qg) (Max) @ Vgs 48 nC @ 18 V
- Input Capacitance (Ciss) (Max) @ Vds 571 pF @ 500 V
- ECCN EAR99
- HTSUS 8541.29.0095
- Moisture Sensitivity Level (MSL) 1 (Unlimited)
- REACH Status REACH Unaffected
- RoHS Status ROHS3 Compliant
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