- Product Model SCT3022ALGC11
- Brand ROHM Semiconductor
- RoHS Yes
- Description SICFET N-CH 650V 93A TO247N
- Categories Single FETs, MOSFETs
-
PDF
- In Stock 2993
- 1 50.98
- 30 42.72
- 120 39.87
Technical Details
- Package / Case TO-247-3
- Mounting Type Through Hole
- Operating Temperature 175°C (TJ)
- Technology SiCFET (Silicon Carbide)
- FET Type N-Channel
- Current - Continuous Drain (Id) @ 25°C 93A (Tc)
- Rds On (Max) @ Id, Vgs 28.6mOhm @ 36A, 18V
- Power Dissipation (Max) 339W (Tc)
- Vgs(th) (Max) @ Id 5.6V @ 18.2mA
- Supplier Device Package TO-247N
- Drive Voltage (Max Rds On, Min Rds On) 18V
- Vgs (Max) +22V, -4V
- Drain to Source Voltage (Vdss) 650 V
- Gate Charge (Qg) (Max) @ Vgs 133 nC @ 18 V
- Input Capacitance (Ciss) (Max) @ Vds 2208 pF @ 500 V
- ECCN EAR99
- HTSUS 8541.29.0095
- Moisture Sensitivity Level (MSL) 1 (Unlimited)
- REACH Status REACH Unaffected
- RoHS Status ROHS3 Compliant
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