- Product Model IPP65R110CFDAAKSA1
- Brand IR (Infineon Technologies)
- RoHS Yes
- Description MOSFET N-CH 650V 31.2A TO220-3
- Categories Single FETs, MOSFETs
-
PDF
- In Stock 1500
Pricing:
- 1 7.6
- 50 6.06
- 100 5.43
- 500 4.79
- 1000 4.31
- 2000 4.04
Technical Details
- Package / Case TO-220-3
- Mounting Type Through Hole
- Operating Temperature -40°C ~ 150°C (TJ)
- Technology MOSFET (Metal Oxide)
- FET Type N-Channel
- Current - Continuous Drain (Id) @ 25°C 31.2A (Tc)
- Rds On (Max) @ Id, Vgs 110mOhm @ 12.7A, 10V
- Power Dissipation (Max) 277.8W (Tc)
- Vgs(th) (Max) @ Id 4.5V @ 1.3mA
- Supplier Device Package PG-TO220-3
- Grade Automotive
- Drive Voltage (Max Rds On, Min Rds On) 10V
- Vgs (Max) ±20V
- Drain to Source Voltage (Vdss) 650 V
- Gate Charge (Qg) (Max) @ Vgs 118 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds 3240 pF @ 100 V
- Qualification AEC-Q101
- ECCN EAR99
- HTSUS 8541.29.0095
- Moisture Sensitivity Level (MSL) 1 (Unlimited)
- REACH Status REACH Unaffected
- RoHS Status ROHS3 Compliant
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