- Product Model IPW65R110CFDAFKSA1
- Brand IR (Infineon Technologies)
- RoHS Yes
- Description MOSFET N-CH 650V 31.2A TO247-3
- Categories Single FETs, MOSFETs
-
PDF
- In Stock 1740
- 1 8.75
- 30 6.98
- 120 6.25
- 510 5.51
- 1020 4.96
- 2010 4.65
Technical Details
- Package / Case TO-247-3
- Mounting Type Through Hole
- Operating Temperature -40°C ~ 150°C (TJ)
- Technology MOSFET (Metal Oxide)
- FET Type N-Channel
- Current - Continuous Drain (Id) @ 25°C 31.2A (Tc)
- Rds On (Max) @ Id, Vgs 110mOhm @ 12.7A, 10V
- Power Dissipation (Max) 277.8W (Tc)
- Vgs(th) (Max) @ Id 4.5V @ 1.3mA
- Supplier Device Package PG-TO247-3
- Grade Automotive
- Drive Voltage (Max Rds On, Min Rds On) 10V
- Vgs (Max) ±20V
- Drain to Source Voltage (Vdss) 650 V
- Gate Charge (Qg) (Max) @ Vgs 118 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds 3240 pF @ 100 V
- Qualification AEC-Q101
- ECCN EAR99
- HTSUS 8541.29.0095
- Moisture Sensitivity Level (MSL) 1 (Unlimited)
- REACH Status REACH Unaffected
- RoHS Status ROHS3 Compliant
Related Products
MOSFET N-CH 100V 300A 8HPSOF
In Stock: 5296
- 2000: 3.59
MOSFET N-CH 80V 180A TO263-7
In Stock: 2482
- 1000: 3.94
- 2000: 3.69
AUTOMOTIVE_COOLMOS PG-TO263-7
In Stock: 2500
- 1000: 2.94
- 2000: 2.77
HIGH POWER_NEW
In Stock: 1740
- 1: 3.99
- 30: 3.16
- 120: 2.71
- 510: 2.65
MOSFET N-CH 650V 31.2A TO247-3
In Stock: 1708
- 1: 6.66
- 30: 5.32
- 120: 4.76
- 510: 4.2
- 1020: 3.78
- 2010: 3.54
MOSFET N-CH 650V 22.4A TO247-3
In Stock: 1720
- 1: 6.03
- 10: 5.17
- 240: 4.06
- 720: 3.8
- 1200: 3.42
- 2160: 3.21
IC MCU 8BIT 128KB FLASH 28VQFN
In Stock: 1843
- 1: 2.36
