• In Stock 3713
Pricing:
  • 1 7.21
  • 30 5.76
  • 120 5.15
  • 510 4.55
  • 1020 4.09
  • 2010 3.83

Technical Details

  • Package / Case TO-3PFM, SC-93-3
  • Mounting Type Through Hole
  • Operating Temperature 175°C (TJ)
  • Technology SiCFET (Silicon Carbide)
  • FET Type N-Channel
  • Current - Continuous Drain (Id) @ 25°C 3.7A (Tc)
  • Rds On (Max) @ Id, Vgs 1.5Ohm @ 1.1A, 18V
  • Power Dissipation (Max) 35W (Tc)
  • Vgs(th) (Max) @ Id 4V @ 900µA
  • Supplier Device Package TO-3PFM
  • Drive Voltage (Max Rds On, Min Rds On) 18V
  • Vgs (Max) +22V, -6V
  • Drain to Source Voltage (Vdss) 1700 V
  • Gate Charge (Qg) (Max) @ Vgs 14 nC @ 18 V
  • Input Capacitance (Ciss) (Max) @ Vds 184 pF @ 800 V
  • ECCN EAR99
  • HTSUS 8541.29.0095
  • Moisture Sensitivity Level (MSL) 1 (Unlimited)
  • REACH Status REACH Unaffected
  • RoHS Status ROHS3 Compliant

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