• In Stock 2450
Pricing:
  • 1 10.76
  • 50 8.59
  • 100 7.69
  • 500 6.78
  • 1000 6.1

Technical Details

  • Package / Case TO-220-3
  • Mounting Type Through Hole
  • Operating Temperature -55°C ~ 150°C (TJ)
  • Technology MOSFET (Metal Oxide)
  • FET Type N-Channel
  • Current - Continuous Drain (Id) @ 25°C 12A (Tc)
  • Rds On (Max) @ Id, Vgs 690mOhm @ 6A, 10V
  • Power Dissipation (Max) 250W (Tc)
  • Vgs(th) (Max) @ Id 5V @ 100µA
  • Supplier Device Package TO-220
  • Drive Voltage (Max Rds On, Min Rds On) 10V
  • Vgs (Max) ±30V
  • Drain to Source Voltage (Vdss) 1200 V
  • Gate Charge (Qg) (Max) @ Vgs 44.2 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds 1370 pF @ 100 V
  • ECCN EAR99
  • HTSUS 8541.29.0095
  • Moisture Sensitivity Level (MSL) 1 (Unlimited)
  • REACH Status REACH Unaffected
  • RoHS Status ROHS3 Compliant

Related Products


SICFET N-CH 1200V 7.6A TO247-3

In Stock: 4672

  • 1: 7.4
  • 30: 5.91
  • 120: 5.29
  • 510: 4.67
  • 1020: 4.2
  • 2010: 3.94

SIC MOSFET N-CH 41A TO247-4

In Stock: 2206

  • 1: 10.77

SIC MOSFET 1200V 80M TO-247-3L

In Stock: 2899

  • 1: 11.42
  • 30: 9.12
  • 120: 8.16
  • 510: 7.2
  • 1020: 6.48

SICFET N-CH 1.2KV 4.7A TO247-3

In Stock: 2863

  • 1: 4.32
  • 30: 3.45
  • 120: 3.2

SICFET N-CH 1.2KV 36A TO247-4

In Stock: 1761

  • 1: 11.58
  • 30: 9.37
  • 120: 8.82
  • 510: 7.99
  • 1020: 7.33

SICFET N-CH 1200V 17A TO247N

In Stock: 3490

  • 1: 10.09
  • 30: 8.06
  • 120: 7.21
  • 510: 6.36
  • 1020: 5.73

MOSFET N-CH 1200V 12A H2PAK-2

In Stock: 3453

  • 1000: 5.85

MOSFET N-CH 1200V 12A TO247

In Stock: 2097

  • 1: 10.25
  • 30: 8.18
  • 120: 7.32
  • 510: 6.46
  • 1020: 5.81

SICFET N-CH 1200V 7.6A TO247-3

In Stock: 2076

  • 1: 5.02
  • 30: 4.01
  • 120: 3.71

SICFET N-CH 1700V 7.6A TO247-3

In Stock: 76924

  • 1: 6.12
  • 30: 4.88
  • 120: 4.53
Top