- Product Model G3R350MT12J-TR
- Brand GeneSiC Semiconductor
- RoHS Yes
- Description 1200V 350M TO-263-7 G3R SIC MOSF
- Categories Single FETs, MOSFETs
-
PDF
- In Stock 2270
- 800 4.05
- 1600 3.91
Technical Details
- Package / Case TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
- Mounting Type Surface Mount
- Operating Temperature -55°C ~ 175°C (TJ)
- Technology SiC (Silicon Carbide Junction Transistor)
- FET Type N-Channel
- Current - Continuous Drain (Id) @ 25°C 10A (Tc)
- Rds On (Max) @ Id, Vgs 395mOhm @ 4A, 18V
- Power Dissipation (Max) 64W (Tc)
- Vgs(th) (Max) @ Id 2.7V @ 2mA
- Supplier Device Package TO-263-7
- Drive Voltage (Max Rds On, Min Rds On) 15V, 18V
- Vgs (Max) +22V, -10V
- Drain to Source Voltage (Vdss) 1200 V
- Gate Charge (Qg) (Max) @ Vgs 10 nC @ 15 V
- Input Capacitance (Ciss) (Max) @ Vds 331 pF @ 800 V
- ECCN EAR99
- HTSUS 8541.29.0095
- Moisture Sensitivity Level (MSL) 1 (Unlimited)
- REACH Status REACH Unaffected
- RoHS Status ROHS3 Compliant
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