- Product Model G080P06T
- Brand Goford Semiconductor
- RoHS Yes
- Description P-60V,-195A,RD(MAX)<7.5M@-10V,VT
- Categories Single FETs, MOSFETs
-
PDF
- In Stock 1630
- 1 1.82
- 50 1.47
- 100 1.21
- 500 1.02
- 1000 0.87
- 2000 0.82
- 5000 0.79
- 10000 0.77
Technical Details
- Package / Case TO-220-3
- Mounting Type Through Hole
- Operating Temperature -55°C ~ 150°C (TJ)
- Technology MOSFET (Metal Oxide)
- FET Type P-Channel
- Current - Continuous Drain (Id) @ 25°C 195A (Tc)
- Rds On (Max) @ Id, Vgs 7.5mOhm @ 20A, 10V
- Power Dissipation (Max) 294W (Tc)
- Vgs(th) (Max) @ Id 4V @ 250µA
- Supplier Device Package TO-220
- Drive Voltage (Max Rds On, Min Rds On) 10V
- Vgs (Max) ±20V
- Drain to Source Voltage (Vdss) 60 V
- Gate Charge (Qg) (Max) @ Vgs 186 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds 15195 pF @ 30 V
- ECCN EAR99
- HTSUS 8541.29.0095
- Moisture Sensitivity Level (MSL) 1 (Unlimited)
- REACH Status REACH Unaffected
- RoHS Status RoHS Compliant
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