- Product Model G65P06T
- Brand Goford Semiconductor
- RoHS Yes
- Description P-60V,RD(MAX)<18M@-10V,VTH-2.0V~
- Categories Single FETs, MOSFETs
-
PDF
- In Stock 1623
- 1 1.57
Technical Details
- Package / Case TO-220-3
- Mounting Type Through Hole
- Operating Temperature -55°C ~ 150°C (TJ)
- Technology MOSFET (Metal Oxide)
- FET Type P-Channel
- Current - Continuous Drain (Id) @ 25°C 65A (Tc)
- Rds On (Max) @ Id, Vgs 18mOhm @ 20A, 10V
- Power Dissipation (Max) 130W (Tc)
- Vgs(th) (Max) @ Id 3.5V @ 250µA
- Supplier Device Package TO-220
- Drive Voltage (Max Rds On, Min Rds On) 10V
- Vgs (Max) ±20V
- Drain to Source Voltage (Vdss) 60 V
- Gate Charge (Qg) (Max) @ Vgs 75 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds 5814 pF @ 25 V
- ECCN EAR99
- HTSUS 8541.29.0095
- Moisture Sensitivity Level (MSL) 1 (Unlimited)
- REACH Status REACH Unaffected
- RoHS Status ROHS3 Compliant
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