- Product Model G2002A
- Brand Goford Semiconductor
- RoHS Yes
- Description N200V, 2A,RD<540M@10V,VTH1.0V~3.
- Categories Single FETs, MOSFETs
-
PDF
- In Stock 2456
- 3000 0.1
- 6000 0.1
- 9000 0.09
- 30000 0.08
- 75000 0.08
Technical Details
- Package / Case SOT-23-6
- Mounting Type Surface Mount
- Operating Temperature -55°C ~ 150°C (TJ)
- Technology MOSFET (Metal Oxide)
- FET Type N-Channel
- Current - Continuous Drain (Id) @ 25°C 2A (Tc)
- Rds On (Max) @ Id, Vgs 540mOhm @ 1A, 10V
- Power Dissipation (Max) 2.5W (Tc)
- Vgs(th) (Max) @ Id 3V @ 250µA
- Supplier Device Package SOT-23-6L
- Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
- Vgs (Max) ±20V
- Drain to Source Voltage (Vdss) 200 V
- Gate Charge (Qg) (Max) @ Vgs 16 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds 733 pF @ 100 V
- ECCN EAR99
- HTSUS 8541.29.0095
- REACH Status REACH Unaffected
- RoHS Status ROHS3 Compliant
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