- Product Model NTH4L075N065SC1
- Brand Sanyo Semiconductor/onsemi
- RoHS Yes
- Description SILICON CARBIDE (SIC) MOSFET - 5
- Categories Single FETs, MOSFETs
-
PDF
- In Stock 2010
- 1 9.61
- 30 7.67
- 120 6.86
- 510 6.05
- 1020 5.45
Technical Details
- Package / Case TO-247-4
- Mounting Type Through Hole
- Operating Temperature -55°C ~ 175°C (TJ)
- Technology SiCFET (Silicon Carbide)
- FET Type N-Channel
- Current - Continuous Drain (Id) @ 25°C 38A (Tc)
- Rds On (Max) @ Id, Vgs 85mOhm @ 15A, 18V
- Power Dissipation (Max) 148W (Tc)
- Vgs(th) (Max) @ Id 4.3V @ 5mA
- Supplier Device Package TO-247-4L
- Drive Voltage (Max Rds On, Min Rds On) 15V, 18V
- Vgs (Max) +22V, -8V
- Drain to Source Voltage (Vdss) 650 V
- Gate Charge (Qg) (Max) @ Vgs 61 nC @ 18 V
- Input Capacitance (Ciss) (Max) @ Vds 1196 pF @ 325 V
- ECCN EAR99
- HTSUS 8541.29.0095
- Moisture Sensitivity Level (MSL) 1 (Unlimited)
- REACH Status REACH Unaffected
- RoHS Status ROHS3 Compliant
Related Products
650V 120M SIC MOSFET
In Stock: 2097
- 1: 9.42
- 10: 8.51
- 30: 8.12
- 120: 7.05
- 270: 6.73
- 510: 6.14
- 1020: 5.34
SILICON CARBIDE MOSFET, PG-TO247
In Stock: 1690
- 1: 11.33
- 30: 9.17
- 120: 8.63
- 510: 7.82
- 1020: 7.17
TRANS SJT N-CH 700V 39A TO247-4
In Stock: 1550
- 1: 9.92
SIC MOSFET 1200 V 14 MOHM M3P SE
In Stock: 2001
- 800: 19.23
SILICON CARBIDE (SIC) MOSFET - 1
In Stock: 3830
- 800: 13.7
SICFET N-CH 1200V 17.3A TO247
In Stock: 2611
- 1: 8.5
- 30: 6.78
- 120: 6.07
- 510: 5.36
- 1020: 4.82
- 2010: 4.52
SILICON CARBIDE (SIC) MOSFET ELI
In Stock: 1786
- 1: 18.3
- 10: 16.13
- 450: 12.64
SIC MOS D2PAK-7L 650V
In Stock: 3865
- 800: 7.99
SIC MOS TO247-4L 650V
In Stock: 1740
- 1: 21.24
- 10: 18.87
- 450: 14.09
SICFET N-CH 650V 70A TO247-4L
In Stock: 1669
- 1: 49.17
- 30: 41.2
- 120: 38.46
