• In Stock 1669
Pricing:
  • 1 49.17
  • 30 41.2
  • 120 38.46

Technical Details

  • Package / Case TO-247-4
  • Mounting Type Through Hole
  • Operating Temperature 175°C (TJ)
  • Technology SiCFET (Silicon Carbide)
  • FET Type N-Channel
  • Current - Continuous Drain (Id) @ 25°C 70A (Tc)
  • Rds On (Max) @ Id, Vgs 39mOhm @ 27A, 18V
  • Power Dissipation (Max) 262W
  • Vgs(th) (Max) @ Id 5.6V @ 13.3mA
  • Supplier Device Package TO-247-4L
  • Drive Voltage (Max Rds On, Min Rds On) 18V
  • Vgs (Max) +22V, -4V
  • Drain to Source Voltage (Vdss) 650 V
  • Gate Charge (Qg) (Max) @ Vgs 104 nC @ 18 V
  • Input Capacitance (Ciss) (Max) @ Vds 1526 pF @ 500 V
  • ECCN EAR99
  • HTSUS 8541.29.0095
  • Moisture Sensitivity Level (MSL) 1 (Unlimited)
  • REACH Status REACH Unaffected
  • RoHS Status ROHS3 Compliant

Related Products


1200V 40MOHM SIC MOSFET

In Stock: 2798

  • 1: 27.02
  • 30: 22.4
  • 120: 21
  • 510: 17.92

650V 120M SIC MOSFET

In Stock: 2097

  • 1: 9.42
  • 10: 8.51
  • 30: 8.12
  • 120: 7.05
  • 270: 6.73
  • 510: 6.14
  • 1020: 5.34

TRANS SJT 1700V TO247-4

In Stock: 1710

  • 1: 5.61

SILICON CARBIDE MOSFET, NCHANNEL

In Stock: 1953

  • 1: 12.02
  • 30: 9.73
  • 120: 9.16
  • 510: 8.3
  • 1020: 7.61

SILICON CARBIDE (SIC) MOSFET - 5

In Stock: 2010

  • 1: 9.61
  • 30: 7.67
  • 120: 6.86
  • 510: 6.05
  • 1020: 5.45

SICFET N-CH 1200V 102A TO247

In Stock: 2466

  • 1: 81.99
  • 30: 71.41
  • 120: 67.71

SICFET N-CH 1200V 17A TO247N

In Stock: 3490

  • 1: 10.09
  • 30: 8.06
  • 120: 7.21
  • 510: 6.36
  • 1020: 5.73

1200V, 18M, 4-PIN THD, TRENCH-ST

In Stock: 6293

  • 1: 41.12
  • 30: 34.46
  • 120: 32.16

750V, 26M, 4-PIN THD, TRENCH-STR

In Stock: 5341

  • 1: 21.26
  • 10: 18.89
  • 450: 14.1

750V, 45M, 4-PIN THD, TRENCH-STR

In Stock: 6359

  • 1: 14.14
  • 10: 12.46
  • 450: 9.77
Top