- Product Model IMT65R057M1HXUMA1
- Brand IR (Infineon Technologies)
- RoHS Yes
- Description SILICON CARBIDE MOSFET
- Categories Single FETs, MOSFETs
-
PDF
- In Stock 3500
- 2000 5.09
Technical Details
- Package / Case 8-PowerSFN
- Mounting Type Surface Mount
- Technology SiCFET (Silicon Carbide)
- Supplier Device Package PG-HSOF-8-2
- Drive Voltage (Max Rds On, Min Rds On) 18V
- Drain to Source Voltage (Vdss) 650 V
- ECCN EAR99
- HTSUS 8541.29.0095
- Moisture Sensitivity Level (MSL) Not Applicable
- REACH Status REACH Unaffected
- RoHS Status ROHS3 Compliant
Related Products
SILICON CARBIDE MOSFET PG-TO263-
In Stock: 2423
- 1000: 5.91
SILICON CARBIDE MOSFET
In Stock: 3431
- 2000: 10.74
SILICON CARBIDE MOSFET
In Stock: 3434
- 2000: 8.13
SILICON CARBIDE MOSFET
In Stock: 3498
- 2000: 6.59
SILICON CARBIDE MOSFET
In Stock: 3471
- 2000: 6.45
SILICON CARBIDE MOSFET
In Stock: 3500
- 2000: 4.41
SILICON CARBIDE MOSFET
In Stock: 3465
- 2000: 4.4
SILICON CARBIDE MOSFET
In Stock: 3304
- 2000: 3.46
SILICON CARBIDE MOSFET
In Stock: 3500
- 2000: 2.87
SILICON CARBIDE MOSFET
In Stock: 3465
- 2000: 2.11
