- Product Model IMT65R107M1HXUMA1
- Brand IR (Infineon Technologies)
- RoHS Yes
- Description SILICON CARBIDE MOSFET
- Categories Single FETs, MOSFETs
-
PDF
- In Stock 3304
- 2000 3.46
Technical Details
- Package / Case 8-PowerSFN
- Mounting Type Surface Mount
- Technology SiCFET (Silicon Carbide)
- Supplier Device Package PG-HSOF-8-2
- Drive Voltage (Max Rds On, Min Rds On) 18V
- Drain to Source Voltage (Vdss) 650 V
- ECCN EAR99
- HTSUS 8541.29.0095
- Moisture Sensitivity Level (MSL) Not Applicable
- REACH Status REACH Unaffected
- RoHS Status ROHS3 Compliant
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