- Product Model AS1M025120P
- Brand Anbon Semiconductor
- RoHS Yes
- Description N-CHANNEL SILICON CARBIDE POWER
- Categories Single FETs, MOSFETs
-
PDF
- In Stock 1624
- 1 38.03
Technical Details
- Package / Case TO-247-3
- Mounting Type Through Hole
- Operating Temperature -55°C ~ 150°C (TJ)
- Technology SiCFET (Silicon Carbide)
- FET Type N-Channel
- Current - Continuous Drain (Id) @ 25°C 90A (Tc)
- Rds On (Max) @ Id, Vgs 34mOhm @ 50A, 20V
- Power Dissipation (Max) 463W (Tc)
- Vgs(th) (Max) @ Id 4V @ 15mA
- Supplier Device Package TO-247-3
- Drive Voltage (Max Rds On, Min Rds On) 20V
- Vgs (Max) +25V, -10V
- Drain to Source Voltage (Vdss) 1200 V
- Gate Charge (Qg) (Max) @ Vgs 195 nC @ 20 V
- Input Capacitance (Ciss) (Max) @ Vds 3600 pF @ 1000 V
- ECCN EAR99
- HTSUS 8541.29.0095
- Moisture Sensitivity Level (MSL) 1 (Unlimited)
- RoHS Status ROHS3 Compliant
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