- Product Model IMW120R020M1HXKSA1
- Brand IR (Infineon Technologies)
- RoHS Yes
- Description SIC DISCRETE
- Categories Single FETs, MOSFETs
-
PDF
- In Stock 1759
- 1 29.49
- 30 24.45
- 120 22.92
- 510 19.56
Technical Details
- Package / Case TO-247-3
- Mounting Type Through Hole
- Operating Temperature -55°C ~ 175°C (TJ)
- Technology SiCFET (Silicon Carbide)
- FET Type N-Channel
- Current - Continuous Drain (Id) @ 25°C 98A (Tc)
- Rds On (Max) @ Id, Vgs 26.9mOhm @ 41A, 18V
- Power Dissipation (Max) 375W (Tc)
- Vgs(th) (Max) @ Id 5.2V @ 17.6mA
- Supplier Device Package PG-TO247-3
- Drive Voltage (Max Rds On, Min Rds On) 15V, 18V
- Vgs (Max) +20V, -5V
- Drain to Source Voltage (Vdss) 1200 V
- Gate Charge (Qg) (Max) @ Vgs 109 nC @ 18 V
- Input Capacitance (Ciss) (Max) @ Vds 3460 pF @ 800 V
- ECCN EAR99
- HTSUS 8541.29.0095
- Moisture Sensitivity Level (MSL) 1 (Unlimited)
- REACH Status REACH Unaffected
- RoHS Status ROHS3 Compliant
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