• In Stock 1819
Pricing:
  • 1 19.68
  • 30 15.93
  • 120 15
  • 510 13.59

Technical Details

  • Package / Case TO-247-4
  • Mounting Type Through Hole
  • Operating Temperature -40°C ~ 175°C (TJ)
  • Technology SiCFET (Silicon Carbide)
  • FET Type N-Channel
  • Current - Continuous Drain (Id) @ 25°C 32A (Tc)
  • Rds On (Max) @ Id, Vgs 90mOhm @ 20A, 15V
  • Power Dissipation (Max) 136W (Tc)
  • Vgs(th) (Max) @ Id 3.6V @ 5mA
  • Supplier Device Package TO-247-4L
  • Drive Voltage (Max Rds On, Min Rds On) 15V
  • Vgs (Max) +15V, -4V
  • Drain to Source Voltage (Vdss) 1200 V
  • Gate Charge (Qg) (Max) @ Vgs 53 nC @ 15 V
  • Input Capacitance (Ciss) (Max) @ Vds 1390 pF @ 1000 V
  • ECCN EAR99
  • HTSUS 8541.29.0095
  • Moisture Sensitivity Level (MSL) Not Applicable
  • REACH Status REACH Affected
  • RoHS Status ROHS3 Compliant

Related Products


SICFET N-CH 1200V 36A TO247-3

In Stock: 3085

  • 1: 29.24
  • 30: 24.24
  • 120: 22.73
  • 510: 19.39

SICFET N-CH 1200V 19A TO247-3

In Stock: 3224

  • 1: 15.91
  • 30: 12.88
  • 120: 12.12
  • 510: 10.98

1200V 40MOHM SIC MOSFET

In Stock: 2798

  • 1: 27.02
  • 30: 22.4
  • 120: 21
  • 510: 17.92

SICFET N-CH 650V 37A TO247-4L

In Stock: 1636

  • 1: 16.57
  • 30: 13.41
  • 120: 12.62
  • 510: 11.44

75M 1200V 175C SIC FET

In Stock: 1891

  • 1: 19.68
  • 30: 15.93
  • 120: 15
  • 510: 13.59

SICFET N-CH 1200V 30A TO247-4L

In Stock: 2587

  • 1: 20.97
  • 30: 17.39
  • 120: 16.3
  • 510: 13.91

SIC, MOSFET, 16M, 1200V, TO-247-

In Stock: 1900

  • 1: 11.59
  • 30: 9.25
  • 120: 8.28
  • 510: 7.3
  • 1020: 6.57

SICFET N-CH 1200V 52A TO247-4

In Stock: 1751

  • 1: 19.55
  • 30: 16.21
  • 120: 15.2
  • 510: 12.97

SICFET N-CH 1200V 37A TO247-4

In Stock: 1604

  • 1: 13.19

DISCRETE

In Stock: 1500

  • 600: 30.88
Top