• In Stock 2587
Pricing:
  • 1 20.97
  • 30 17.39
  • 120 16.3
  • 510 13.91

Technical Details

  • Package / Case TO-247-4
  • Mounting Type Through Hole
  • Operating Temperature -55°C ~ 150°C (TJ)
  • Technology SiCFET (Silicon Carbide)
  • FET Type N-Channel
  • Current - Continuous Drain (Id) @ 25°C 30A (Tc)
  • Rds On (Max) @ Id, Vgs 90mOhm @ 20A, 15V
  • Power Dissipation (Max) 113.6W (Tc)
  • Vgs(th) (Max) @ Id 4V @ 5mA
  • Supplier Device Package TO-247-4L
  • Drive Voltage (Max Rds On, Min Rds On) 15V
  • Vgs (Max) +19V, -8V
  • Drain to Source Voltage (Vdss) 1200 V
  • Gate Charge (Qg) (Max) @ Vgs 51 nC @ 15 V
  • Input Capacitance (Ciss) (Max) @ Vds 1350 pF @ 1000 V
  • California Prop 65 California Prop 65 Information
  • ECCN EAR99
  • HTSUS 8541.29.0095
  • Moisture Sensitivity Level (MSL) 1 (Unlimited)
  • REACH Status REACH Affected
  • RoHS Status ROHS3 Compliant

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