Technical Details

• Package / Case 6-PowerVDFN
• Mounting Type Surface Mount
• Operating Temperature -55°C ~ 150°C (TJ)
• Technology MOSFET (Metal Oxide)
• FET Type N-Channel
• Current - Continuous Drain (Id) @ 25°C 9.9A (Ta), 21A (Tc)
• Rds On (Max) @ Id, Vgs 13mOhm @ 8.5A, 10V
• Power Dissipation (Max) 2.1W (Ta)
• Vgs(th) (Max) @ Id 2.35V @ 25µA
• Supplier Device Package 6-PQFN (2x2)
• Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
• Vgs (Max) ±20V
• Drain to Source Voltage (Vdss) 25 V
• Gate Charge (Qg) (Max) @ Vgs 10.4 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds 653 pF @ 10 V
• ECCN EAR99
• HTSUS 8542.39.0001