Technical Details

• Package / Case DirectFET™ Isometric L8
• Mounting Type Surface Mount
• Operating Temperature -55°C ~ 175°C (TJ)
• Technology MOSFET (Metal Oxide)
• FET Type N-Channel
• Current - Continuous Drain (Id) @ 25°C 375A (Tc)
• Rds On (Max) @ Id, Vgs 38mOhm @ 21A, 10V
• Power Dissipation (Max) 4.3W (Ta), 125W (Tc)
• Vgs(th) (Max) @ Id 5V @ 250µA
• Supplier Device Package DirectFET™ Isometric L8
• Drive Voltage (Max Rds On, Min Rds On) 10V
• Vgs (Max) ±30V
• Drain to Source Voltage (Vdss) 250 V
• Gate Charge (Qg) (Max) @ Vgs 165 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds 6714 pF @ 25 V
• HTSUS 0000.00.0000