• In Stock 1500
Pricing:
  • 1 43.75
  • 30 36.66
  • 120 34.22

Technical Details

  • Package / Case TO-247-3
  • Mounting Type Through Hole
  • Operating Temperature -55°C ~ 200°C (TJ)
  • Technology SiCFET (Silicon Carbide)
  • FET Type N-Channel
  • Current - Continuous Drain (Id) @ 25°C 91A (Tc)
  • Rds On (Max) @ Id, Vgs 30mOhm @ 50A, 18V
  • Power Dissipation (Max) 547W (Tc)
  • Vgs(th) (Max) @ Id 4.9V @ 1mA
  • Supplier Device Package HiP247™
  • Drive Voltage (Max Rds On, Min Rds On) 18V
  • Vgs (Max) +22V, -10V
  • Drain to Source Voltage (Vdss) 1200 V
  • Gate Charge (Qg) (Max) @ Vgs 150 nC @ 18 V
  • Input Capacitance (Ciss) (Max) @ Vds 3540 pF @ 800 V
  • ECCN EAR99
  • HTSUS 8541.29.0095
  • Moisture Sensitivity Level (MSL) 1 (Unlimited)
  • REACH Status REACH Unaffected
  • RoHS Status ROHS3 Compliant

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