• In Stock 2528
Pricing:
  • 1000 4.42
  • 2000 4.14

Technical Details

  • Package / Case TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
  • Mounting Type Surface Mount
  • Speed No Recovery Time > 500mA (Io)
  • Technology SiC (Silicon Carbide) Schottky
  • Capacitance @ Vr, F 730pF @ 1V, 1MHz
  • Current - Average Rectified (Io) 40A
  • Supplier Device Package PG-TO263-2-1
  • Operating Temperature - Junction -55°C ~ 175°C
  • Voltage - DC Reverse (Vr) (Max) 1200 V
  • Voltage - Forward (Vf) (Max) @ If 1.95 V @ 16 A
  • Current - Reverse Leakage @ Vr 80 µA @ 1200 V
  • ECCN EAR99
  • HTSUS 8541.10.0080
  • Moisture Sensitivity Level (MSL) 1 (Unlimited)
  • REACH Status REACH Unaffected
  • RoHS Status ROHS3 Compliant

Related Products


DIODE SIL CARB 1.2KV 32A D2PAK

In Stock: 3907

  • 800: 10.25

DIODE GP 1.2KV 50A TO263-3-2

In Stock: 4146

  • 1000: 0.97
  • 2000: 0.92
  • 5000: 0.89
  • 10000: 0.86

DIODE SIC 1.2KV 11.8A TO263-1

In Stock: 2288

  • 1000: 1.35
  • 2000: 1.28
  • 5000: 1.23

DIODE SIC 1.2KV 19.1A TO263-1

In Stock: 2455

  • 1000: 1.89
  • 2000: 1.78
  • 5000: 1.7

DIODE SIC 1.2KV 22.8A TO263-1

In Stock: 2009

  • 1000: 2.17
  • 2000: 2.04
  • 5000: 1.96

DIODE SIC 1.2KV 31.9A TO263-1

In Stock: 1500

  • 1000: 2.78
  • 2000: 2.62

DIODE SIL CARB 1.2KV 56A TO263-1

In Stock: 1500

  • 1000: 7.27

DIODE SIL CARB 1.2KV 38A TO252-2

In Stock: 1718

  • 2500: 3.24

DIODE GEN PURP 1.2KV 35A D2PAK

In Stock: 5935

  • 800: 0.84
  • 1600: 0.69
  • 2400: 0.65
  • 5600: 0.62
Top