- Product Model FFSB20120A-F085
- Brand Sanyo Semiconductor/onsemi
- RoHS Yes
- Description DIODE SIL CARB 1.2KV 32A D2PAK
- Categories Single Diodes
-
PDF
- In Stock 3907
- 800 10.25
Technical Details
- Package / Case TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Mounting Type Surface Mount
- Speed No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr) 0 ns
- Technology SiC (Silicon Carbide) Schottky
- Capacitance @ Vr, F 1220pF @ 1V, 100KHz
- Current - Average Rectified (Io) 32A
- Supplier Device Package TO-263 (D2PAK)
- Operating Temperature - Junction -55°C ~ 175°C
- Grade Automotive
- Voltage - DC Reverse (Vr) (Max) 1200 V
- Voltage - Forward (Vf) (Max) @ If 1.75 V @ 20 A
- Current - Reverse Leakage @ Vr 200 µA @ 1200 V
- Qualification AEC-Q101
- ECCN EAR99
- HTSUS 8541.10.0080
- Moisture Sensitivity Level (MSL) 1 (Unlimited)
- REACH Status REACH Unaffected
- RoHS Status ROHS3 Compliant
Related Products
HIGH PRECISION LINEAR HALL EFFEC
In Stock: 6101
- 3000: 3.02
DIODE GEN PURP 1.2KV 30A TO263AA
In Stock: 8761
- 800: 2.12
- 1600: 1.81
- 2400: 1.71
- 5600: 1.64
DIODE SIL CARB 1.2KV 56A TO263-2
In Stock: 4076
- 1: 22.51
- 50: 18.66
- 100: 17.5
- 500: 14.93
DIODE SCHOTTKY 1.2KV 32A D2PAK-3
In Stock: 2005
- 800: 6.44
- 1600: 5.8
DIODE SIL CARB 1.2KV 29A TO252-2
In Stock: 4158
- 2500: 2.31
DIODE SIL CARB 1.2KV 38A TO252-2
In Stock: 1718
- 2500: 3.24
SIC MOSFET 1200 V 14 MOHM M3P SE
In Stock: 2001
- 800: 19.23
SILICON CARBIDE MOSFET, NCHANNEL
In Stock: 1931
- 800: 8.07
DIODE SIL CARB 1.2KV 10A D2PAK
In Stock: 4391
- 1000: 2.96
- 2000: 2.79
