技术参数

• Package / Case 4-DIP (0.157", 4.00mm)
• Output Type Phototransistor
• Sensing Method Reflective
• Mounting Type Through Hole
• Response Time 15µs, 15µs
• Current - Collector (Ic) (Max) 50 mA
• Voltage - Collector Emitter Breakdown (Max) 30 V
• Current - DC Forward (If) (Max) 50 mA
• ECCN EAR99
• HTSUS 8541.49.8000
• Moisture Sensitivity Level (MSL) 1 (Unlimited)
• REACH Status REACH Unaffected