技术参数

• Package / Case 5-SMD, No Lead
• Mounting Type Surface Mount
• Operating Temperature -55°C ~ 150°C (TJ)
• Technology GaNFET (Gallium Nitride)
• FET Type N-Channel
• Current - Continuous Drain (Id) @ 25°C 80A (Tc)
• Rds On (Max) @ Id, Vgs 14.5mOhm @ 30A, 5V
• Vgs(th) (Max) @ Id 2.5V @ 7mA
• Supplier Device Package 5-SMD
• Drive Voltage (Max Rds On, Min Rds On) 5V
• Vgs (Max) +6V, -4V
• Drain to Source Voltage (Vdss) 200 V
• Gate Charge (Qg) (Max) @ Vgs 13.5 nC @ 100 V
• Input Capacitance (Ciss) (Max) @ Vds 1313 pF @ 100 V
• ECCN 9A515E2
• HTSUS 8541.29.0095
• Moisture Sensitivity Level (MSL) 1 (Unlimited)