- 产品型号 RBLQ20BGE10TL
- 品牌 ROHM Semiconductor
- RoHS No
- 描述 TRENCH MOS STRUCTURE, 100V, 20A,
- 分类 单二极管
-
PDF
- 库存 1500
定价:
- 2500 0.62
- 5000 0.59
- 12500 0.56
技术参数
- Package / Case TO-252-3, DPAK (2 Leads + Tab), SC-63
- Mounting Type Surface Mount
- Speed Fast Recovery =< 500ns, > 200mA (Io)
- Technology Schottky
- Current - Average Rectified (Io) 20A
- Supplier Device Package TO-252GE
- Operating Temperature - Junction 150°C
- Voltage - DC Reverse (Vr) (Max) 100 V
- Voltage - Forward (Vf) (Max) @ If 860 mV @ 20 A
- Current - Reverse Leakage @ Vr 80 µA @ 100 V
- ECCN EAR99
- HTSUS 8541.10.0080
- Moisture Sensitivity Level (MSL) 1 (Unlimited)
- REACH Status REACH Unaffected
