技术参数

• Package / Case 4-SMD, No Lead
• Mounting Type Surface Mount
• Operating Temperature -55°C ~ 150°C (TJ)
• Technology GaNFET (Gallium Nitride)
• FET Type N-Channel
• Current - Continuous Drain (Id) @ 25°C 18A (Tc)
• Rds On (Max) @ Id, Vgs 26mOhm @ 18A, 5V
• Vgs(th) (Max) @ Id 2.5V @ 3mA
• Supplier Device Package 4-SMD
• Drive Voltage (Max Rds On, Min Rds On) 5V
• Vgs (Max) +6V, -4V
• Drain to Source Voltage (Vdss) 200 V
• Gate Charge (Qg) (Max) @ Vgs 6 nC @ 5 V
• Input Capacitance (Ciss) (Max) @ Vds 900 pF @ 100 V
• ECCN 9A515E1
• HTSUS 8541.29.0095
• Moisture Sensitivity Level (MSL) Not Applicable