技术参数

• Package / Case 3-XDFN Exposed Pad
• Mounting Type Surface Mount, Wettable Flank
• Transistor Type PNP
• Operating Temperature 150°C (TJ)
• Vce Saturation (Max) @ Ib, Ic 700mV @ 50mA, 500mA
• Current - Collector Cutoff (Max) 100nA (ICBO)
• DC Current Gain (hFE) (Min) @ Ic, Vce 160 @ 100mA, 1V
• Frequency - Transition 80MHz
• Supplier Device Package DFN1110D-3
• Grade Automotive
• Current - Collector (Ic) (Max) 500 mA
• Voltage - Collector Emitter Breakdown (Max) 45 V
• Power - Max 350 mW
• Qualification AEC-Q100
• ECCN EAR99
• HTSUS 8541.21.0095
• Moisture Sensitivity Level (MSL) 3 (168 Hours)
• REACH Status REACH Unaffected
• RoHS Status ROHS3 Compliant