库存:3773

技术细节

  • 包装/箱 TO-261-4, TO-261AA
  • 安装类型 Surface Mount
  • 工作温度 -55°C ~ 150°C (TJ)
  • 技术 MOSFET (Metal Oxide)
  • 场效应管类型 N-Channel
  • 电流 - 连续漏极 (Id) @ 25°C 960mA (Tc)
  • Rds On(最大)@Id、Vgs 1.5Ohm @ 580mA, 10V
  • 功耗(最大) 2W (Ta), 3.1W (Tc)
  • Vgs(th)(最大值)@Id 4V @ 250µA
  • 供应商设备包 SOT-223
  • Vgs(最大) ±20V
  • 漏源电压 (Vdss) 200 V
  • 栅极电荷 (Qg)(最大值)@Vgs 8.2 nC @ 10 V
  • 输入电容 (Ciss)(最大值)@Vds 140 pF @ 25 V

相关产品


DIODE GEN PURP 100V 300MA SOD123

库存: 112394

DIODE GEN PURP 75V 150MA SOD323F

库存: 820100

DIODE GEN PURP 75V 300MA SOD323

库存: 1227083

DIODE GEN PURP 100V 150MA SOD323

库存: 123000

200MW SURFACE MOUNT SWITCHING DI

库存: 21056

DIODE, SWITCHING, 300MA, 75V, SO

库存: 4680

SOD-323F, 100V, 0.15A, SWITCHING

库存: 0

DIODE GEN PURP 75V 0.15A SOD323F

库存: 8973

DIODE GEN PURP 100V 300MA SOD323

库存: 803

High Speed Switching Diode

库存: 2395

MOSFET N-CH 200V 960MA SOT223

库存: 4950

MOSFET P-CH 85V 24A TO263

库存: 2574

IC MCU 16/32BIT 3MB FLSH 144LQFP

库存: 113

DIODE GEN PURP 600V 3A DO214AC

库存: 68668

Top