Inventory:2101
Pricing:
  • 1 15.2
  • 30 12.31
  • 120 11.58
  • 510 10.5
  • 1020 9.63

Technical Details

  • Package / Case TO-247-3
  • Mounting Type Through Hole
  • Operating Temperature 175°C (TJ)
  • Technology SiCFET (Silicon Carbide)
  • FET Type N-Channel
  • Current - Continuous Drain (Id) @ 25°C 17A (Tc)
  • Rds On (Max) @ Id, Vgs 208mOhm @ 5A, 18V
  • Power Dissipation (Max) 103W
  • Vgs(th) (Max) @ Id 5.6V @ 2.5mA
  • Supplier Device Package TO-247N
  • Grade Automotive
  • Drive Voltage (Max Rds On, Min Rds On) 18V
  • Vgs (Max) +22V, -4V
  • Drain to Source Voltage (Vdss) 1200 V
  • Gate Charge (Qg) (Max) @ Vgs 42 nC @ 18 V
  • Input Capacitance (Ciss) (Max) @ Vds 398 pF @ 800 V
  • Qualification AEC-Q101

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