Inventory:9281
Pricing:
  • 3000 1.16
  • 6000 1.12
  • 9000 1.08

Technical Details

  • Package / Case 8-PowerVDFN
  • Mounting Type Surface Mount
  • Speed No Recovery Time > 500mA (Io)
  • Reverse Recovery Time (trr) 0 ns
  • Technology SiC (Silicon Carbide) Schottky
  • Capacitance @ Vr, F 350pF @ 0V, 1MHz
  • Current - Average Rectified (Io) 6A
  • Supplier Device Package PowerFlat™ (8x8) HV
  • Operating Temperature - Junction -40°C ~ 175°C
  • Voltage - DC Reverse (Vr) (Max) 650 V
  • Voltage - Forward (Vf) (Max) @ If 1.55 V @ 6 A
  • Current - Reverse Leakage @ Vr 60 µA @ 650 V

Related Products


DIODE SIL CARBIDE 650V 8A 4PQFN

Inventory: 2881

DIODE SIL CARB 650V 8A POWERFLAT

Inventory: 5914

Top