- Product Model IPA65R190CFDXKSA2
- Brand IR (Infineon Technologies)
- RoHS Yes
- Description MOSFET N-CH 650V 17.5A TO220
- Classification Single FETs, MOSFETs
-
PDF
- 1 3.35
- 50 2.65
- 100 2.27
- 500 2.02
- 1000 1.73
- 2000 1.63
- 5000 1.56
Technical Details
- Package / Case TO-220-3 Full Pack
- Mounting Type Through Hole
- Operating Temperature -55°C ~ 150°C (TJ)
- Technology MOSFET (Metal Oxide)
- FET Type N-Channel
- Current - Continuous Drain (Id) @ 25°C 17.5A (Tc)
- Rds On (Max) @ Id, Vgs 190mOhm @ 7.3A, 10V
- Power Dissipation (Max) 34W (Tc)
- Vgs(th) (Max) @ Id 4.5V @ 700µA
- Supplier Device Package PG-TO220-FP
- Drive Voltage (Max Rds On, Min Rds On) 10V
- Vgs (Max) ±20V
- Drain to Source Voltage (Vdss) 650 V
- Gate Charge (Qg) (Max) @ Vgs 68 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds 1850 pF @ 100 V
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