Technical Details

• Package / Case TO-226-3, TO-92-3 (TO-226AA) Formed Leads
• Mounting Type Through Hole
• Transistor Type PNP
• Operating Temperature 150°C (TJ)
• Vce Saturation (Max) @ Ib, Ic 600mV @ 30mA, 300mA
• Current - Collector Cutoff (Max) 100nA (ICBO)
• DC Current Gain (hFE) (Min) @ Ic, Vce 120 @ 150mA, 10V
• Frequency - Transition 200MHz
• Supplier Device Package TO-92-B1
• Current - Collector (Ic) (Max) 500 mA
• Voltage - Collector Emitter Breakdown (Max) 50 V
• Power - Max 625 mW