- Product Model SIHB100N60E-GE3
- Brand Vishay / Siliconix
- RoHS Yes
- Description MOSFET N-CH 600V 30A D2PAK
- Classification Single FETs, MOSFETs
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Inventory:1570
Pricing:
- 1 4.88
- 50 3.86
- 100 3.31
- 500 2.94
- 1000 2.52
- 2000 2.37
Technical Details
- Package / Case TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Mounting Type Surface Mount
- Operating Temperature -55°C ~ 150°C (TJ)
- Technology MOSFET (Metal Oxide)
- FET Type N-Channel
- Current - Continuous Drain (Id) @ 25°C 30A (Tc)
- Rds On (Max) @ Id, Vgs 100mOhm @ 13A, 10V
- Power Dissipation (Max) 208W (Tc)
- Vgs(th) (Max) @ Id 5V @ 250µA
- Supplier Device Package TO-263 (D2PAK)
- Drive Voltage (Max Rds On, Min Rds On) 10V
- Vgs (Max) ±30V
- Drain to Source Voltage (Vdss) 600 V
- Gate Charge (Qg) (Max) @ Vgs 50 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds 1851 pF @ 100 V