- Product Model SIHD1K4N60E-GE3
- Brand Vishay / Siliconix
- RoHS Yes
- Description MOSFET N-CH 600V 4.2A TO252AA
- Classification Single FETs, MOSFETs
-
PDF
Inventory:1500
Pricing:
- 1 1.12
- 10 0.91
- 100 0.71
- 2000 0.46
- 6000 0.44
- 10000 0.42
Technical Details
- Package / Case TO-252-3, DPAK (2 Leads + Tab), SC-63
- Mounting Type Surface Mount
- Operating Temperature -55°C ~ 150°C (TJ)
- Technology MOSFET (Metal Oxide)
- FET Type N-Channel
- Current - Continuous Drain (Id) @ 25°C 4.2A (Tc)
- Rds On (Max) @ Id, Vgs 1.45Ohm @ 500mA, 10V
- Power Dissipation (Max) 63W (Tc)
- Vgs(th) (Max) @ Id 5V @ 250µA
- Supplier Device Package DPAK
- Drive Voltage (Max Rds On, Min Rds On) 10V
- Vgs (Max) ±30V
- Drain to Source Voltage (Vdss) 600 V
- Gate Charge (Qg) (Max) @ Vgs 7.5 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds 172 pF @ 100 V