- Product Model TP65H050WS
- Brand Transphorm
- RoHS Yes
- Description GANFET N-CH 650V 34A TO247-3
- Classification Single FETs, MOSFETs
-
PDF
- 1 17.67
- 30 14.3
- 120 13.46
- 510 12.2
Technical Details
- Package / Case TO-247-3
- Mounting Type Through Hole
- Operating Temperature -55°C ~ 150°C (TJ)
- Technology GaNFET (Cascode Gallium Nitride FET)
- FET Type N-Channel
- Current - Continuous Drain (Id) @ 25°C 34A (Tc)
- Rds On (Max) @ Id, Vgs 60mOhm @ 22A, 10V
- Power Dissipation (Max) 119W (Tc)
- Vgs(th) (Max) @ Id 4.8V @ 700µA
- Supplier Device Package TO-247-3
- Drive Voltage (Max Rds On, Min Rds On) 12V
- Vgs (Max) ±20V
- Drain to Source Voltage (Vdss) 650 V
- Gate Charge (Qg) (Max) @ Vgs 24 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds 1000 pF @ 400 V
Related Products
GAN041-650WSB/SOT429/TO-247
Inventory: 263
SIC DISCRETE
Inventory: 228
SICFET N-CH 650V 30A TO247N
Inventory: 1546
650 V 95 A GAN FET
Inventory: 713
GANFET N-CH 650V 46.5A TO247-3
Inventory: 590
650 V 34 A GAN FET
Inventory: 213
GANFET N-CH 650V 36A TO247-3
Inventory: 43
MOSFET 650V, 480mOhm
Inventory: 0
GANFET N-CH 900V 34A TO247-3
Inventory: 107
GANFET N-CH 600V 17A TO220AB
Inventory: 324
