- Product Model SIDR626DP-T1-GE3
- Brand Vishay / Siliconix
- RoHS Yes
- Description MOSFET N-CH 60V 42.8A/100A PPAK
- Classification Single FETs, MOSFETs
-
PDF
- 3000 1.23
- 6000 1.19
Technical Details
- Package / Case PowerPAK® SO-8
- Mounting Type Surface Mount
- Operating Temperature -55°C ~ 150°C (TJ)
- Technology MOSFET (Metal Oxide)
- FET Type N-Channel
- Current - Continuous Drain (Id) @ 25°C 42.8A (Ta), 100A (Tc)
- Rds On (Max) @ Id, Vgs 1.7mOhm @ 20A, 10V
- Power Dissipation (Max) 6.25W (Ta), 125W (Tc)
- Vgs(th) (Max) @ Id 3.4V @ 250µA
- Supplier Device Package PowerPAK® SO-8DC
- Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
- Vgs (Max) ±20V
- Drain to Source Voltage (Vdss) 60 V
- Gate Charge (Qg) (Max) @ Vgs 102 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds 5130 pF @ 30 V
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