- Product Model 2SK3564(STA4,Q,M)
- Brand Toshiba Electronic Devices and Storage Corporation
- RoHS Yes
- Description MOSFET N-CH 900V 3A TO220SIS
- Categories Single FETs, MOSFETs
-
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- In Stock 1667
Pricing:
- 1 1.56
- 50 1.25
- 100 0.99
- 500 0.84
- 1000 0.68
- 2000 0.64
- 5000 0.61
- 10000 0.58
Technical Details
- Package / Case TO-220-3 Full Pack
- Mounting Type Through Hole
- Operating Temperature 150°C (TJ)
- Technology MOSFET (Metal Oxide)
- FET Type N-Channel
- Current - Continuous Drain (Id) @ 25°C 3A (Ta)
- Rds On (Max) @ Id, Vgs 4.3Ohm @ 1.5A, 10V
- Power Dissipation (Max) 40W (Tc)
- Vgs(th) (Max) @ Id 4V @ 1mA
- Supplier Device Package TO-220SIS
- Drive Voltage (Max Rds On, Min Rds On) 10V
- Vgs (Max) ±30V
- Drain to Source Voltage (Vdss) 900 V
- Gate Charge (Qg) (Max) @ Vgs 17 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds 700 pF @ 25 V
- ECCN EAR99
- HTSUS 8541.29.0095
- Moisture Sensitivity Level (MSL) 1 (Unlimited)
- RoHS Status ROHS3 Compliant
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